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PZTA44

UTC
Part Number PZTA44
Manufacturer UTC
Description HIGH VOLTAGE TRANSISTOR
Published Apr 15, 2007
Detailed Description UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V...
Datasheet PDF File PZTA44 PDF File

PZTA44
PZTA44



Overview
UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V(PZTA44) VCEO=350V(PZTA45) *Collector current up to 300mA *Complement to PZTA94/93 *Collector Dissipation: Pc(max)=2W 1 2 3 4 APPLICATION *Telephone switching *High voltage switch SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified) PARAMETER Collector-base voltage PZTA44 PZTA45 Collector-emitter voltage PZTA44 PZTA45 Emitter-base voltage Collector dissipation(Ta=25°C) Collector dissipation(Tc=25°C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO www.
DataSheet4U.
com RATING 500 400 UNIT V V VCEO VEBO Pc Pc Ic Tj TSTG 400 350 6 625 2 300 150 -55 ~ +150 V mW W mA °C °C UTC UNISONIC TECHNOLOGIES CO.
LTD 1 QW-R207-003,A UTC PZTA44/ 45 PARAMETER NPN EPITAXIAL SILICON TRANSISTOR SYMBOL BVCBO ELECTRICAL CHARACTERISTICS (Tj=25°C,unless otherwise specified) TEST CONDITIONS Ic=100µA,IB=0 500 400 BVCEO Ic=1mA,IB=0 400 350 6 0.
1 0.
1 µA VCE=400V,IB=0 VCE=320V,IB=0 VEB=4V,Ic=0 VCE=10V,Ic=1mA VCE=10V,Ic=10mA VCE=10V,Ic=50mA VCE=10V,Ic=100mA Ic=1mA,IB=0.
1mA Ic=10mA,IB=1mA Ic=50mA,IB=5mA Ic=10mA,IB=1mA VCE=20V,Ic=10mA, f=100MHz VCB=20V,IE=0 f=1MHz 0.
5 0.
5 0.
1 40 50 45 40 240 V V µA V MIN TYP MAX UNIT Collector-base breakdown voltage PZTA44 PZTA45 Collector-emitter breakdown voltage PZTA44 PZTA45 Emitter-base breakdown voltage Collector cut-off current PZTA44 PZTA45 Collector cut-off current PZTA44 PZTA45 Emitter cut-off current DC current gain(note) BVEBO ICBO IE=100µA,Ic=0 VCB=400V,IE=0 VCB=320V,IE=0 ICES IEBO hFE µA Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage Current gain bandwidth product Output capacitance VBE(sat) fT Cob 0.
4 0.
5 0.
75 0.
75 50 7 V V MHz pF Note:Pulse test:PW<300µs,Duty Cycle<2% UTC UNISONIC TECHNOLOGIES CO.
LTD 2 QW-R207-003,A UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR...



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