PNP SILICON TRANSISTOR - UTC
Description
UNISONIC TECHNOLOGIES CO.
, LTD BC856/BC857/BC858
SWITCHING AND AMPLIFIER APPLICATIONS
PNP SILICON TRANSISTOR
FEATURES
*Suitable for automatic insertion in thick and thin-film circuits *Complement to BC846/BC847/BC848
*Pb-free plating product number: BC856L/BC857L/BC858L
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ORDERING INFORMATION
Package SOT-23 SOT-23 SOT-23 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel
Order Number Normal Lead Free Plating BC856-x-AE3-R BC856L-x-AE3-R BC857-x-AE3-R BC857L-x-AE3-R BC858-x-AE3-R BC858L-x-AE3-R Note: x: Rank
MARKING
BC856 BC857 BC858
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tw Copyright © 2005 Unisonic Technologies Co.
, Ltd
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QW-R206-028,B
BC856/BC857/BC858
PARAMETER SYMBOL BC856 BC857 BC858 BC856 BC857 BC858
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
RATINGS UNIT -80 V Collector-Base Voltage VCBO -50 V -30 V -65 V Collector-Emitter Voltage VCEO -45 V -30 V Emitter-Base Voltage VEBO -5 V Collector Dissipation PD 310 mW Collector Current (DC) IC -100 mA Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
MIN 110 TYP MAX UNIT -15 nA 800 -90 -300 mV -250 -700 -900 -660 150 2 mV mV mV -750 mV -800 mV MHz 6 pF 10 dB -650
PARAMETER Collector Cut-Off Current DC Current Gain
SYMBOL TEST CONDITIONS ICBO VCB=-30V, IE=0 hFE VCE=-5V, IC=-2mA IC=-10mA,IB=-0.
5mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-100mA,IB=-5mA IC=-10mA,IB=-0.
5mA Base-Emitter Saturation Voltage VBE(SAT) IC=-100mA,IB=-5mA VCE=-5V,IC=-2mA Base-Emitter On Voltage VBE(ON) VCE=-5V,IC=-10mA Current Gain Bandwidth Product fT VCE=-5V,IC=-10mA, f=100MHz Output Capacitance Cob VCB=-10V,IE=0,f=1MHz Noise Figure NF VCE=-5V, IC=-200μA, f=1KHz, ...
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