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2SB798

UTC
Part Number 2SB798
Manufacturer UTC
Description POWER TRANSISTOR
Published Apr 13, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB798...
Datasheet PDF File 2SB798 PDF File

2SB798
2SB798


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits.
 FEATURES * Low Collector Saturation Voltage: VCE(sat)< -0.
4V (Ic = -1.
0A, IB = -100mA ) * Excellent DC Current Gain Linearity : hFE = 100 Typ.
(VCE = -1.
0V, IC = -1.
0A)  ORDERING INFORMATION Order Number 2SB798G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 Pin Assignment 123 BCE Packing Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R208-020.
C 2SB798 PNP EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -30 -25 V V Emitter-Base Voltage Collector Current DC Pulse(Note 1) VEBO IC -5.
0 -1.
0 -1.
5 V A A Collector Dissipation (Note 2) PC 2 W Junction Temperature Storage Temperature TJ TSTG 150 -55 ~ +150 C C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
PW≦10ms,Duty Cycle≦50% 3.
When mounted on a ceramic substrate of 16cm2×0.
7 mm.
 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain DC Current Gain Base to Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Note: PW≦350μs, Duty Cycle≦2% SYMBOL ICBO IEBO hFE1 hFE2 VBE TEST CONDITIONS VCB= -30V , IE= 0 VEB= -5.
0V, IC= 0 VCE= -1.
0V, IC= -100mA VCE= -1.
0V, IC= -1.
0A VCE= -6.
0V, IC= -10mA VCE(sat) IC= -1.
0A, IB= -0.
10A VBE(sat) fT Cob IC= -1.
0A, IB= -0.
10A VCE= -6.
0V, IE= 10mA VCB= -6.
0V, IE= 0, f=1MHz MIN 90 50 -600 TYP 200 100 ...


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