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MPSA14
Part Number
MPSA14
Manufacturer
Fairchild Semiconductor
Description
NPN Darlington Transistor
Datasheet
MPSA14
PDF File
Overview
www.
DataSheet4U.
com MPSA14 / MMBTA14 / PZTA14 Discrete POWER & Signal Technologies MPSA14 MMBTA14 C PZTA14 C E C B E C B TO-92 E SOT-23 Mark: 1N B SOT-223
NPN
Darlington
Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1.
0 A.
Sourced from Process 05.
Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 30 30 10 1.
2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA14 625 5.
0 83.
3 200 Max *MMBTA14 350 2.
8 357 **PZTA14 1,000 8.
0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.
6" X 1.
6" X 0.
06.
" **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.
5 mm; mounting pad for the collector lead min.
6 cm2.
© 1997 Fairchild Semiconductor Corporation A14, Rev B MPSA14 / MMBTA14 / PZTA14
NPN
Darlington
Transistor
(continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 100 µ A, IB = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 30 100 100 V nA nA ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 10 mA, VCE ...
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