(MPSA13 / MPSA14) NPN Silicon Darlington Transistor - MCC
Description
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MCC
Features
• • • •
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
MPSA13 MPSA14
Capable of 1.
5Watts of Power Dissipation.
Collector-current 500mA Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC
NPN Silicon Darlington Transistor
TO-92
A E
Pin Configuration Bottom View
C
B
E
Maximum Ratings
Symbol V CES V CBO V EBO IC PD PD TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous O Total Device Dissipation @T A =25 C O Derate above 25 C O Total Device Dissipation @T A =25 C Derate above 25OC Junction Temperature Storage Temperature Parameter Collector-Emitter Breakdown Voltage (IC=100uAdc, IB =0) Collector Cutoff Current (VCB=30Vdc, IE =0) Emitter Cutoff Current (V EB =10Vdc, IC=0) DC Current Gain (IC=10mAdc, V CE=5.
0Vdc) Rating 30 30 10 500 625 5.
0 1.
5 12 -55 to +150 -55 to +150 Min 30 100 100 Max Unit V V V mA mW mW/ OC W mW/ OC O C O C Units Vdc nAdc nAdc
B
C
Electrical Characteristics @ 25OC Unless Otherwise Specified
OFF CHARACTERISTICS
V(BR)CES ICBO IEBO D
ON CHARACTERISTICS(1)
hFE(1) MPSA13 MPSA14 5000 10000 10000 20000 1.
5 2.
0 Vdc Vdc G
DIMENSIONS INCHES MIN .
175 .
175 .
500 .
016 .
135 .
095 MM MIN 4.
45 4.
46 12.
7 0.
41 3.
43 2.
42
hFE(2)
VCE(sat) VBE(on)
DC Current Gain (IC=100mAdc, V CE=5.
0Vdc) MPSA 13 MPSA14 Collector-Emitter Saturation Voltage (IC=100mAdc, IB =0.
1mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, V CE=5.
0Vdc)
DIM A B C D E G
MAX .
185 .
185 --.
020 .
145 .
105
MAX 4.
70 4.
70 --0.
63 3.
68 2.
67
NOTE
SMALL-SIGNAL CHARACTERISTICS
fT 1.
Current-Gain – Bandwidth Product (2) (IC=10mAdc, V CE=5.
0Vdc, f=100MHz) Pulse Test: Pulse Width<300us, Duty Cycle<2.
0% f T =|hfe| x ftest 125 MHz
2.
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MPSA13 thru MPSA14
MCC
RS
in en
IDEAL TRANSISTOR
Figure 1.
Transistor Noise Model
500 200 100
BANDWIDTH = 1.
0 Hz RS ≈ 0 i n, NOISE CURR...
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