(MPSA13 / MPSA14) EPITAXIAL PLANAR NPN TRANSISTOR - KEC
Description
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATIONS.
DARLINGTON TRANSISTOR.
B
MPSA13/14
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N K D E G
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VEBO IC PC Tj Tstg RATING 30 30 10 500 625 150 -55ᴕ150 UNIT V V
M
H
F
F
V mA mW ᴱ ᴱ
L
1
2
3
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.
70 MAX 4.
80 MAX 3.
70 MAX 0.
45 1.
00 1.
27 0.
85 0.
45 _ 0.
50 14.
00 + 0.
55 MAX 2.
30 0.
45 MAX 1.
00
J
1.
EMITTER 2.
BASE 3.
COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC Collector-Emitter Breakdown Voltage Emitter Cut-off Current Emitter Cut-off Current MPSA13 DC Current Gain MPSA14 MPSA13 MPSA14 Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwith Product VCE(sat) VBE fT hFE IC=100mA, VCE=5V IC=100mA, IB=0.
1mA IC=100mA, VCE=5V IC=10mA, f=100MHz, VCE=5V SYMBOL VCES ICBO IEBO TEST CONDITION IC=0.
1mA VCB=30V VEB=10V IC=10mA, VCE=5V MIN.
30 5,000 10,000 10,000 20,000 125 TYP.
MAX.
100 100 1.
5 2.
0 V V MHz UNIT V nA nA
2000.
2.
26
Revision No : 3
1/2
MPSA13/14
h FE - I
200K DC CURRENT GAIN h FE 100K 50K 30K
C
f T - IC
TRANSITION FREQUENCY f T (MHz) 500
VCE =5V VCE =5V
300
100
10K 5K 3K 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (A)
50 30 1 3 5 10 30 50 100 COLLECTOR CURRENT I C (mA)
V BE (sat), VCE (sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VBE (sat), VCE (sat) (V) COLLECTOR CURRENT I C (mA) 5 3
I C =1000I B
I C - V BE
200 100 50 30
VCE =5V
VBE (sat)
1 0.
5 0.
3 0.
2 5 10
VCE (sat)
10 5 3 1
30
50
100
300 500
0
0.
4
0.
8
1.
2
1.
6
2.
0
2.
4
2.
8
COLLECTOR CURRENT I C (mA)
BASE-EMITTER VOLTAGE V BE (V)
2000.
2.
26
Revision No : 3
2/2
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