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2N6052

Part Number	2N6052
Manufacturer	Motorola
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Published	Apr 2, 2007
Detailed Description	www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6052/D Darlington Complementary Si...
Datasheet	2N6052 PDF File

Overview

www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6052/D Darlington Complementary Silicon Power Transistors .
.
.
designed for general–purpose amplifier and low frequency switching applications.
• High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.
0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058 VCEO(sus) = 100 Vdc (Min) — 2N6052, 2N6059 • Monolithic Construction with Built–In Base–Emitter Shunt Resistors MAXIMUM RATINGS (1) Rating 2N6052 * NPN PNP 2N6058 2N6059 * *Motorola Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ...

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