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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD5P06V/D
Designer's
TMOS V
™ . ™
Data Sheet
MTD5P06V
Motorola Preferred Device
Power Field Effect Transistor DPAK for Surface Mount
P–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and powe...