Schottky Barrier Diode - Fuji Electric
Description
This material and the information herein is the property of Fuji Electric Co.
,Ltd.
They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any t h ird pa rt y n o r u s ed f o r th e m an uf a c tu rin g p u rp o se s wit h o u t the express written consent Fuji Electric Co.
,Ltd.
DATE
S P E C I F I C AT I O N
： Schottky Barrier Diode
DWG.
NO.
CHECKED SEP.
-05-‘03
DRAWN SEP.
-05-‘03
SEP.
-05-‘03
NAME
www.
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Device Name
Spec.
No.
Type Name
Model Name
APPROVED
： SILICON DIODE
： MS5D1917
： YA846C04B
Fuji Electric Co.
,Ltd.
MS5D1917
Fuji Electric Co.
,Ltd.
Matsumoto Factory
1/12
H04-004-07
This material and the information herein is the property of Fuji Electric Co.
,Ltd.
They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any t h ird pa rt y n o r u s ed f o r th e m an uf a c tu rin g p u rp o se s wit h o u t the express written consent Fuji Electric Co.
,Ltd.
SEP.
-05 -2003 Date Classification Enactment Ind.
―
DWG.
NO.
Fuji Electric Co.
,Ltd.
Content ―――――― Issued date ――― Applied date Drawn Checked Approved
Revised Records
MS5D1917
2/12
H04-004-06
1.
SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE YA846C04B 2.
OUT VIEW, MARKING, MOLDING RESIN, CHARACTERISTICS (1)Out view is shown (2)Marking is shown (3)Molding resin Epoxy resin UL : V-0 (4)Characteristics is shown MS5D1917 10/12～12/12 3.
RATINGS 3.
1 MAXIMUM RATINGS (at Tc=25℃ unless otherwise specified.
) ITEM SYMBOL CONDITIONS RATINGS Repetitive peak surge reverse voltage VRSM tw=500ns,duty=1/40 45 Repetitive peak reverse voltage VRRM 45 Square wave duty =1/2 Average output current Io 30* Tc= 98 ℃ Non-repetitive surge current ** IFSM Sine wave, 10ms 1shot 200 Operating junction temperature Tj 150 Storage temperature Tstg -40～+150 * Out put current of center tap full wave connection.
**
MS5D1917 MS5D1917
9/12 9/12
It is marked to type name or abbreviated...
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