INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier
Description
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PD 91677B
IRG4BC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 600V VCE(on) typ.
= 2.
15V
Features
• UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous Generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package
G
@VGE = 15V, IC = 5.
0A
E
n-cha nn el
tf (typ.
) = 140ns
Benefits
• Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
Minimized recovery characteristics require less/no snubbing
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600 8.
5 5.
0 34 34 4.
0 16 ± 20 38 15 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m)
Units
V
A
V W
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
— — — — —
Typ.
— — 0.
50 — 2 (0.
07)
Max.
3.
3 7.
0 — 80 —
Units
°C/W
g (oz)
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1
12/30/00
IRG4BC10UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min.
Typ.
Collector-to-Emitter Breakdown VoltageS 600 — ∆V(BR)CES/∆TJ Tempera...
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