512K X 8 CMOS DYNAMIC RAM - G-Link
Description
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G -LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.
2.
1)
Features : ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ 524,288 words by 8 bits organization.
Fast access time and cycle time.
Low power dissipation.
Operating Current-150mA max.
TTL Standby Current-2mA max.
Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT44108 is a 524,288 x 8 bit highperformance CMOS dynamic random access memory.
The GLT44108 offers Fast Page mode with asymmetric address and accepts 512-cycle refresh in 8ms interval.
All inputs are TTL compatible.
Fast Page Mode operation allows random access up to 512 x 8 bits within a page, with cycle times as short as 22ns.
The GLT44108 is best suited for graphics, digital signal processing and high performance peripherals.
CAS -Before- RAS Refresh, Hidden Refresh and Test Mode Capability.
1024 refresh cycles/16ms.
Available in 28pin 400 mil SOJ Single +5.
0V±10% Power Supply.
All inputs and Outputs are TTLcompatible.
Fast Page Mode supports sustained data rates up to 50MHZ.
PIN CONFIGURATION :
GLT44108 28 Lead SOJ
Vcc DQ0 DQ1 DQ2 DQ3 NC WE RAS A9 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VSS DQ7 DQ6 DQ5 DQ4 CAS OE NC A8 A7 A6 A5 A4 VSS
G-Link Technology
2701 Northwestern Parkway Santa Clara, CA 95051, U.
S.
A.
G-Link Technology Corporation,Taiwan
6F, No.
24-2, Industry E.
RD.
IV, Science Based Industrial Park, Hsin Chu, Taiwan.
-1-
G -LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.
2.
1)
HIGH PERFORMANCE Max.
RAS Access Time, (tRAC) Max.
Column Address Access Time, (tAA) Min.
Fast Page Mode Cycle Time, (tPC) Min.
Read/Write Cycle Time, (tRC) Max.
CAS Access Time (tCAC)
-40 40 ns 20 ns 22 ns 75 ns 12 ns
-50 50 ns 25 ns 31 ns 90 ns 13 ns
-60 60 ns 30 ns 40 ns 110 ns 15 ns
Pin Descriptions: Name A0 – A9 RAS CAS WE OE DQ0 - DQ7 VCC VSS Block Diagram:
OE WE CAS
Function Address Inputs Row Address Strobe Column Address Str...
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