NPN low VCEsat (BISS) transistor - NXP
Description
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PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
Rev.
01 — 21 April 2005 Product data sheet
1.
Product profile
1.
1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package.
PNP complement: PBSS5420D.
1.
2 Features
s s s s s Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less heat generation
1.
3 Applications
s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.
g.
motors, fans) Thin Film Transistor (TFT) backlight inverter
1.
4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 400 mA
[2]
Conditions open base
[1]
Min -
Typ 50
Max 20 4 15 70
Unit V A A mΩ
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Pulse test: tp ≤ 300 µs; δ ≤ 0.
02.
Philips Semiconductors
PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
2.
Pinning information
Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector
1 2 3 6 5 4 3 4
sym014
Simplified outline
Symbol
1, 2, 5, 6
3.
Ordering information
Table 3: Ordering information Package Name PBSS4420D SC-74 Description plastic surface mounted package; 6 leads Version SOT457 Type number
4.
Marking
Table 4: Marking codes Marking code D4 Type number PBSS4420D
5.
Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation si...
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