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DIM200MHS17-A000

Dynex Semiconductor
Part Number DIM200MHS17-A000
Manufacturer Dynex Semiconductor
Description Igbt Modules - Half Bridge
Published Jan 13, 2007
Detailed Description www.DataSheet4U.com DIM200MHS17-A000 DIM200MHS17-A000 Half Bridge IGBT Module Replaces issue March 2002, version DS545...
Datasheet PDF File DIM200MHS17-A000 PDF File

DIM200MHS17-A000
DIM200MHS17-A000


Overview
www.
DataSheet4U.
com DIM200MHS17-A000 DIM200MHS17-A000 Half Bridge IGBT Module Replaces issue March 2002, version DS5459-4.
0 DS5459-5.
1 June 2002 FEATURES s s s 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.
7V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS s s Inverters Motor Controllers 11(C2) 6(G2) 7(E2) 3(C1) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The DIM200MHS17-A000 is a half bridge 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers t...



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