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IXBH42N170

IXYS Corporation
Part Number IXBH42N170
Manufacturer IXYS Corporation
Description Monolithic Bipolar MOS Transistor
Published Jan 10, 2007
Detailed Description High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1...
Datasheet PDF File IXBH42N170 PDF File

IXBH42N170
IXBH42N170

Overview
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.
8V Symbol VCES VCGR VGES VGEM IC25 ILRMS IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load TC = 25°C 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 1700 1700 V V ± 20 ± 30 V V 80 A 75 A 42 A 300 A ICM = 100 VCES ≤ 1350 360 A V W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 260 1.
13/10 °C °C Nm/lb.
in.
6g 4g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES IGES VCE(sat) VCE = 0.
8 • VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 42A, VGE = 15V, Note 1 Characteristic Values Min.
Typ.
Max.
1700 V 2.
...


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