| Part Number | HE8812SG |
| Manufacturer | Hitachi Semiconductor |
| Title | GaAlAs Infrared Emitting Diode |
| Description | The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide ra... |
| Features |
• High efficiency and high output power Package Type • HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 ... |
| Published | Dec 30, 2006 |
| Datasheet |
 HE8812SG PDF File
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