Silicon NPN epitaxial planar type - Panasonic Semiconductor
Description
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Transistors with built-in Resistor
UNR521W
Silicon NPN epitaxial planar type
For digital circuits Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts SMini type package allowing easy automatic insertion through tape packing
0.
3+0.
1 –0.
0 3 1.
25±0.
10 2.
1±0.
1 (0.
425)
Unit: mm
0.
15+0.
10 –0.
05
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO IC PT Tj Tstg
Rating 50 50 100 150 150 –55 to +150
Unit V V mA mW °C °C
10°
(0.
65) (0.
65) 1.
3±0.
1 2.
0±0.
2
1: Base 2: Emitter 3: Collecter
0 to 0.
1
0.
9±0.
1
0.
9+0.
2 –0.
1
SMini3-G1 Package
Marking Symbol: 9F Internal Connection
C
B R2 (100 kΩ)
E
Electrical Characteristics Ta = 25°C±3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) R2 fT VCB = 10 V, IE = —2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.
3 mA —30% 100 100 80 0.
25 +30% Min 50 50 0.
1 0.
5 100 Typ Max Unit V V µA µA µA V kΩ MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.
2±0.
1
Absolute Maximum Ratings Ta = 25°C
1
2
5°
Publication date: December 2004
SJH00111AED
1
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical informa...
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