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RN2414

Part Number	RN2414
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Dec 15, 2006
Detailed Description	www.DataSheet4U.com RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2...
Datasheet	RN2414 PDF File

Overview

www.
DataSheet4U.
com RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1414~RN1418 Unit: mm Equivalent Circuit and Bias Resistor Values Type No.
RN2414 RN2415 RN2416 RN2417 RN2418 R1 (kΩ) 1 2.
2 4.
7 10 47 R2 (kΩ) 10 10 10 4.
7 10 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN2414~2418 RN2414 RN2415 Emitter-base voltage RN2416 RN2417 RN2418 Collector current Collector power dissipation Junction temperature Storage temperature range RN2414~2418 IC PC Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −5 −6 −7 −15 −25 −100 200 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.
012g TO-236MOD SC-59 2-3F1A Unit V V V mA mW °C °C 1 2001-06-07 RN2414~RN2418 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN2414~2418 RN2414~2418 RN2414 RN2415 Emitter cut-off current RN2416 RN2417 RN2418 DC current gain Collector-emitter saturation voltage RN2414~16, 18 RN2417 RN2414~2418 RN2414 RN2415 Input voltage (ON) RN2416 RN2417 RN2418 RN2414 RN2415 Input voltage (OFF) RN2416 RN2417 RN2418 Translation frequency Collector output capacitance RN2414~2418 RN2414~2418 RN2414 RN2415 Input resistor RN2416 RN2417 RN2418 RN2414 RN2415 Resistor ratio RN2416 RN2417 RN2418 R1/R2 R1 fT Cob VI (OFF) VI (ON) hFE VCE (sat) IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE =−10V, IC = −5mA VCB = −10V, IE = 0, f = 1MHz VCE = −5V, IC = −0.
1mA VCE = −0.
2V, IC = −5mA Test Condition VCB = −50V, IE = 0 VCE = −50V, IB = 0 VEB = −5V, IC = 0 VEB = −6V, IC = 0 VEB = −7V, IC = 0 VEB = −15V, IC = 0 VEB = −25V, IC = 0 VCE = −5V, IC = −10mA IC = −5mA, IB = −0.
25mA Min ― ― −0.
35 −0.
37 −0.
36 −0.
78 −0.
33 50 30 ― −0.
5 −0.
6 −0.
...

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