Silicon N-Channel MOSFET - Renesas Technology
Description
HAT2173H
Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 12 mΩ typ.
(at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
5 D
4 G
SSS 123
REJ03G0030-0200 Rev.
2.
00
Sep 26, 2005
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C
Tch
Tstg
Ratings 100 ±20 25 100 25 25 62.
5 30 4.
17 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C/W °C °C
Rev.
2.
00 Sep 26, 2005 page 1 of 7
HAT2173H
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 100
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
4.
0
Static drain to source on state resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
27
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Notes: 4.
Pulse test
Typ — — — — — 12 13 45 4350 520 150 0.
5 61 23 14.
5 20 15 37 5.
7 0.
82 55
Max — — ±10 1 6.
0 15 17.
5 — — — — — — — — — — — — 1.
07 —
Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns
(Ta = 25°C)
Test Cond...
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