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HY62UF16804A

Hynix Semiconductor
Part Number HY62UF16804A
Manufacturer Hynix Semiconductor
Description 512Kx16bit full CMOS SRAM
Published Dec 12, 2006
Detailed Description www.DataSheet4U.com HY62UF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Ful...
Datasheet PDF File HY62UF16804A PDF File

HY62UF16804A
HY62UF16804A


Overview
www.
DataSheet4U.
com HY62UF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.
0V Super Low Power Full CMOS slow SRAM Revision History Revision No 04 History Initial Revision History Insert Revised - Reliability Spec Deleted Change AC Characteristics - tBLZ : 5/5/5 ---> 10/10/10 Part Number is changed - HY62UF16803A --> HY62UF16804A Marking Instruction is inserted Test Condition Changed - ILO / ISB / ISB1 / VDR / ICCDR Marking Istruction Inserted Change Logo - Hyundai à Hynix Change DC Parameter - Isb1(LL) : 40uA à - Isb1(Typ) : 8uA à - Icc : 5mA à - Icc1(1us) : 8mA à - Icc1(Min) : 50mA à Change Data Retention - IccDR(LL) : 25uA à Change AC Parameter - tOE : 35ns à : 40ns à - tCW : 50ns à - tAW : 50ns à - tBW : 50ns à - tWP : 45ns à - tCHZ : 30ns à - tOHZ : 30ns à - tBHZ : 30ns à 25uA 1uA 4mA 4mA 40mA 15uA 25ns@55ns 35ns@70ns 45ns@55ns 45ns@55ns 45ns@55ns 40ns@55ns 20ns@55ns , 30ns à 25ns@70ns 20ns@55ns , 30ns à 25ns@70ns 20ns@55ns , 30ns à 25ns@70ns Draft Date Jul.
02.
2000 Remark Preliminary 05 Oct.
23.
2000 Preliminary 06 Nov.
13.
2000 Preliminary 07 08 Dec.
5.
2000 Dec.
16.
2000 Preliminary Preliminary 09 Apr.
28.
2001 10 Jan.
28.
2002 This document is a general product description and is subject to change without notice.
Hyundai Electronics does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
10 /Jan2002 Hynix Semiconductor HY62UF16804A DESCRIPTION The HY62UF16804A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits.
The HY62UF16804A uses high performance full CMOS process technology and is designed for high speed and low power circuit technology.
It is particularly wellsuited for the high density low power system application.
This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.
2V.
Product Voltage Speed No.
(V) (ns) HY62UF16804A-C 2.
7~3.
3 55/70/85 HY62UF16804A-I 2.
7~3.
3 55/70/85 Note 1.
C...


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