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SUM40N10-30

Vishay Siliconix
Part Number SUM40N10-30
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Nov 9, 2006
Detailed Description www.DataSheet4U.com SUM40N10-30 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR...
Datasheet PDF File SUM40N10-30 PDF File

SUM40N10-30
SUM40N10-30


Overview
www.
DataSheet4U.
com SUM40N10-30 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 40 37.
5 0.
030 @ VGS = 10 V 0.
034 @ VGS = 6 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive - Motor Drives - 12-V Switches D TO-263 G G D S S N-Channel MOSFET Top View Ordering Information: SUM40N10-30 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.
1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 100 "20 40 23 75 35 61 107b 3.
75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a.
Duty cycle v 1%.
b.
See SOA curve for voltage derating.
c.
When mounted on 1” square PCB (FR-4 material).
Document Number: 72134 S-03538—Rev.
A, 24-Mar-03 www.
vishay.
com Mount)c Symbol RthJA RthJC Limit 40 1.
4 Unit _C/W 1 www.
DataSheet4U.
com SUM40N10-30 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V Zero Gate Voltage g Drain Current IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C VDS = 80 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain Source On-State Drain-Source On State Resistancea VGS = 6 V, ID = 10 A rDS(on) DS( ) VGS = 10 V, ID = 15 A, TJ = 125_C VGS = 10 V, ID = 15 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 75 0.
024 0.
026 0.
030 0.
034 0.
054 0.
067 S W 100 V 2 4 "100 1...


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