INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier
Description
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PD -94274A
IRG4MC50F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) max = 2.
0V
@VGE = 15V, IC = 30A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-254AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight
Max.
600 35* 30 140 140 ± 20 150 60 -55 to + 150 300 (0.
063in.
/1.
6mm from case for 10s) 9.
3 (typical)
Units
V A
V W
°C g
Thermal Resistance
Parameter
R thJC Junction-to-Case
Min Typ Max Units
— — 0.
83
°C/W
Test Conditions
* Current is limited by internal wire diameter
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02/08/02
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IRG4MC50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS Parameter Min.
Typ.
Collector-to-Emitter Breakdown Voltage 600 ––– Emitter-to-Collector Breakdown Voltage S 17 ––– ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage ––– 0.
58 ––– ––– VCE(...
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