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MT28F008B3

Micron Technology
Part Number MT28F008B3
Manufacturer Micron Technology
Description (MT28F008B3 / MT28F800B3) FLASH MEMORY
Published Oct 1, 2006
Detailed Description www.DataSheet4U.com 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply (Smar...
Datasheet PDF File MT28F008B3 PDF File

MT28F008B3
MT28F008B3

Overview
www.
DataSheet4U.
com 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply (Smart 3) FEATURES • Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 3 technology (B3): 3.
3V ±0.
3V VCC 3.
3V ±0.
3V VPP application programming 5V ±10% VPP application/production programming1 • Compatible with 0.
3µm Smart 3 device • Advanced 0.
18µm CMOS floating-gate process • Address access time: 90ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence DataSheet4U.
com • TSOP, SOP and FBGA packaging options • Byte- or word-wide READ and WRITE (MT28F800B3): 1 Meg x 8/512K x 16 TSOP Type I 48-Pin TSOP Type I 44-Pin SOP DataShee OPTIONS • Timing 90ns access • Configurations 1 Meg x 8 512K x 16/1 Meg x 8 • Boot Block Starting Word Address Top (7FFFFh) Bottom (00000h) • Operating Temperature Range Commercial (0ºC to +70ºC) Extended (-40ºC to +85ºC) • Packages 40-pin TSOP Type I (MT28F008B3) 48-pin TSOP Type I (MT28F800B3) 44-pin SOP (MT28F800B3) NOTE: MARKING -9 GENERAL DESCRIPTION MT28F008B3 MT28F800B3 T B None ET VG WG SG The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits).
Writing and erasing the device is done with a VPP voltage of either 3.
3V or 5V, while all operations are performed with a 3.
3V VCC.
Due to process technology advances, 5V VPP is optimal for application and production programming.
These devices are fabricated with Micron’s advanced 0.
18µm CMOS floating-gate process.
The MT28F008B3 and MT28F800B3 are organized into eleven separately erasable blocks.
To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-pr...


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