RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS - Microsemi Corporation
Description
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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS2213
RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS
Features
• • • • • • • • REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN.
WITH 7.
8 dB Gain
DESCRIPTION:
The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.
The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The MS2213 is supplied in the hermetic metal/ceramic package with internal input matching structures.
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ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS IC VCC TJ TSTG Power Dissipation * (TC ≤ 85° C) Device Current * Collector - Supply Voltage * Junction Temperature (Pulsed RF Operation) Storage Temperature
Parameter
Value
75 3.
5 40 250 - 65 to + 200
Unit
W A V °C °C
Thermal Data
RTH(j-c)
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Junction-Case Thermal Resistance
2.
2
° C/W
* Applies only to rated RF amplifier operation
MSC0920.
PDF 9-23-98
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MS2213
STATIC
ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° C)
Symbol
BVCBO BVEBO
BVCER
Test Conditions Min.
IC = 10 mA IE = 1 mA IC = 20 mA VCE = 35 V VCE = 5V RBE =10Ω IC = 1.
0 A 55 3.
5 55 ---15
Value Typ.
----------------
Max.
---------5.
0 150
Unit
V V V mA ----
ICES hFE
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DYNAMIC
Symbol
POUT VC GP Note:
Test Conditions Min.
f = 960 - 1215 MHz f = 960 - 1215 MHz f = 960 - 1215 MHz PIN = 5.
0 W PIN = 5.
0 W PIN = 5.
0 W
Value Typ.
36 45 8.
6
Max.
----------
Unit
W % dB
VCC = +35 V VCC = +35 V VCC =...
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