RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS - Advanced Power Technology
Description
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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS2200
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS Features
• • • • • • 500 Watts @ 250 µ Sec Pulse Width, 10% Duty Cycle Refractory Gold Metallization Emitter Ballasting And Low Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions Input Matched, Common Base Configuration Balanced Configuration
DESCRIPTION:
The MS2200 is a hermetically sealed, gold metallized silicon NPN DataSheet4U.
com pulse power transistor mounted in a common base balanced configuration.
The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz.
DataShee
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO VCES VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
65 65 3.
5 43.
2 1167 +200 -65 to +150
V V V A W °C °C
Thermal Data
RTH(j-c)
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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Junction-Case Thermal Resistance
0.
15
° C/W
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MS2200
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC
Symbol Test Conditions Min.
Value Typ.
Max.
Units
BVCBO BVCES BVEBO
ICES
hFE
IC = 50 mA IC = 50 mA IE = 10 mA VCE =30 V VCE = 5 V
IE = 0 mA VBE = 0 V IC = 0 mA IE = 0 mA IC = 5 A
65 65 3.
5 20 15 200
V V V mA
DYNAMIC
Symbol Test Conditions Min.
Value Typ.
Max.
Units
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POUT GP ηC
Note:
f = 425 MHz f = 425 MHz f = 425 MHz
PIN = 54 W PIN = 54 W PIN = 54 W
VCE = 40 V VCE = 40 V VCE = 40 V DataSheet4U.
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500 9.
7 50
W Db %
DataShee
Pulse Width = 250µSec, Duty Cycle = 10% This device is suitable for use under other p...
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