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SFD3055L

SemiWell Semiconductor
Part Number SFD3055L
Manufacturer SemiWell Semiconductor
Published Sep 20, 2006
Description Logic N-Channel MOSFET
Detailed Description www.DataSheet4U.com SemiWell Semiconductor SFD3055L Logic N-Cha
Datasheet PDF File SFD3055L PDF File

SFD3055L
SFD3055L


Overview
www.
DataSheet4U.
com SemiWell Semiconductor SFD3055L Logic N-Channel MOSFET Features ■ Low RDS(on) (0.
15Ω )@VGS=10V Low RDS(on) (0.
30Ω )@VGS=4.
5V Low Gate Charge (Typical 6.
5nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { { 2.
Drain ● ■ ■ ■ ■ 1.
Gate ▲ ● ● { 3.
Source General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance and rugged avalanche characteristics.
This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
D-PACK (TO-252) 2 1 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TA = 25 °C) Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 3) (Note 1) Parameter DataSheet4U.
com Value 30 12 7.
7 30 Units V A A A V mJ V/ns W W W/°C °C °C DataShee ±20 30 7.
0 2.
5 42 0.
34 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Min.
- Typ.
- Max.
3 50 Units °C/W °C/W December, 2002.
Rev.
0.
Copyright@SemiWell Semiconductor Co.
, Ltd.
, All rights reserved.
1/7 DataSheet4U.
com DataSheet 4 U .
com www.
DataSheet4U.
com SFD3055L Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 30 0.
027 1 10 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise ...


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