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KSC4468

Fairchild Semiconductor
Part Number KSC4468
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Sep 8, 2006
Detailed Description www.DataSheet4U.com KSC4468 KSC4468 Audio Power Amplifier • • • • High Current Capability : IC=15A High Power Dissipat...
Datasheet PDF File KSC4468 PDF File

KSC4468
KSC4468

Overview
www.
DataSheet4U.
com KSC4468 KSC4468 Audio Power Amplifier • • • • High Current Capability : IC=15A High Power Dissipation Wide S.
O.
A Complement to KSA1695 1 TO-3P 1.
Base 2.
Collector 3.
Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 160 140 6 8 16 80 Units V V V A A W °C °C DataShee DataSheet4U.
com 150 - 55 ~ 150 Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tF tSTG * Pulse Test : PW=20µs Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Test Condition IC=5mA, IE=0 IC=10mA, RBE=∞ IE=5mA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=5A, IB=0.
5A VCE=5V, IC=1A VCE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω Min.
160 140 6 Typ.
Max.
Units V V V 0.
1 0.
1 60 20 200 2.
5 1.
5 30 210 0.
26 0.
68 6.
68 mA mA Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Fall Time Storage Time V V MHz pF µs µs µs hFE Classification Classification hFE1 O 60 ~ 120 Y 100 ~ 200 ©2000 Fairchild Semiconductor International DataSheet4U.
com Rev.
B, Noverber 2000 DataSheet 4 U .
com www.
DataSheet4U.
com KSC4468 Typical Characteristics 18 16 1000 IC[A], COLLECTOR CURRENT 14 12 10 8 6 IB = 400mA IB = 350mA IB = 300mA VCE = 5V hFE, DC CURRENT GAIN IB = 250mA IB = 200mA IB = 150mA IB = 100mA 100 10 IB = 50mA 4 2 IB = 0 0 0 1 2 3 4 5 6 7 8 9 10 1 0.
01 0.
1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1.
Static Characterstic ...


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