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E3055T

ETC
Part Number E3055T
Manufacturer ETC
Description MJE3055T
Published Aug 24, 2006
Detailed Description com MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, ...
Datasheet PDF File E3055T PDF File

E3055T
E3055T

Overview
com MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose SILICON EPITAXIAL PLANAR TRANSISTOR QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 70 60 10 75 1.
2 2.
0 UNIT V V A A W V V s VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 4.
0A; IB = 0.
4A IF = 4.
0A 1.
5 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collecto...


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