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K4M563233E

Part Number	K4M563233E
Manufacturer	Samsung semiconductor
Description	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Published	Aug 1, 2006
Detailed Description	www.DataSheet4U.com K4M563233E - M(E)E/N/G/C/L/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V pow...
Datasheet	K4M563233E PDF File

Overview

www.
DataSheet4U.
com K4M563233E - M(E)E/N/G/C/L/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.
0V & 3.
3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (4K cycle).
...

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