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MRF8372R1

Motorola
Part Number MRF8372R1
Manufacturer Motorola
Description (MRF8372R1 / MRF8372R2) RF LOW POWER TRANSISTOR
Published Jul 10, 2006
Detailed Description www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF8372/D The RF Line NPN Silicon RF...
Datasheet PDF File MRF8372R1 PDF File

MRF8372R1
MRF8372R1

Overview
www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF8372/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges.
• Specified @ 12.
5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.
0 dB Efficiency 60% (Typ) • State–of–the–Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
• Order MRF8372 in tape and reel packaging by adding suffix: R1 suffix = 500 units per reel R2 suffix = 2,500 units per reel CASE 751–05, STYLE 1 SORF (SO–8) MRF8372R1, R2 750 mW, 870 MHz RF LOW POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 75°C (1) Derate above 75°C Sto...


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