(IR2110C / IR2113C) High and Low Side Driver in Die Wafer Form - International Rectifier
Description
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Data Sheet No.
PD65001
IR2110C/IR2113C
HIGH AND LOW SIDE DRIVER IN DIE WAFER FORM
Features
• 100 % Tested at Probec • 3.
3V logic compatible • Available in Chip Pack, Unsawn Wafer, Sawn on Film d Separate logic supply range from 3.
3V to 20V • Floating channel designed for bootstrap operation Logic and power ground ±5V offset Fully operational to +500V or +600V • CMOS Schmitt-triggered inputs with pull-down Tolerant to negative transient voltage • Cycle by cycle edge-triggered shutdown logic dV/dt immune • Matched propagation delay for both channels • Gate drive supply range from 10 to 20V • Outputs in phase with inputs • Undervoltage lockout for both channels
Typical Connection
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up to 500V or 600V
HO VDD HIN SD LIN V SS VCC VDD HIN SD LIN VSS VCC COM LO VB VS TO LOAD
(Refer to the Die Outlines for correct pin configuration).
This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
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Note: c This IR product is100% tested at wafer level and is manufactured using established, mature and well characterized processes.
Due to restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with a conditional performance guarantee.
The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and are provided for illustration purposes only.
Customers are encouraged to perform testing in actual proposed packaged and use conditions.
IR die products are tested using IR-based quality assurance procedures and are manufactured using IR’s established processes.
Programs for customer-specified testing are available upon request.
IR has experienced assembly yields of generally 95% or greater for individual die; however, customer’s results will vary.
Estimates such as those described and set forth in this data sheet for semiconductor die will var...
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