DatasheetsPDF.com

SUB60N06-18

Vishay Siliconix
Part Number SUB60N06-18
Manufacturer Vishay Siliconix
Published Jun 22, 2006
Description N-Channel MOSFET
Detailed Description www.DataSheet4U.com SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 6...
Datasheet PDF File SUB60N06-18 PDF File

SUB60N06-18
SUB60N06-18


Overview
www.
DataSheet4U.
com SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.
018 ID (A) 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View SUP60N06-18 G D S S Top View SUB60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.
1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 100_C www.
DataSheet4U.
com Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 60 39 Unit V A 120 60 180 120b W 3.
7 –55 to 175 _C mJ Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction to Ambient Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a.
Duty cycle v 1%.
b.
See SOA curve for voltage derating.
c.
When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.
vishay.
com/www/product/spice.
htm Document Number: 70290 S–57253—Rev.
D, 24-Feb-98 www.
vishay.
com S FaxBack 408-970-5600 RthJA hJA RthJC Symbol Limit 40 62.
5 1.
25 Unit _C/W 2-1 www.
DataSheet4U DataSheet4U.
com www.
DataSheet4U.
com SUP/SUB60N06-18 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 1 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A a D i S Drain-Source On-State O S Resistance R i Symbol Test Condition Min Typ Max Unit 60 V 2.
0 4.
0 "100 1 50 150 60 0.
014 0.
024 0.
031 49 0.
018 0.
030 0.
036 S W A mA nA rDS(on) VGS = 1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)