DatasheetsPDF.com

IRFP260N

International Rectifier
Part Number IRFP260N
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 20, 2006
Detailed Description PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit...
Datasheet PDF File IRFP260N PDF File

IRFP260N
IRFP260N


Overview
PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.
04Ω G ID = 50A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA www.
irf.
com Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Max.
50 35 200 300 2.
0 ±20 560 50 30 10 -55 to +175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Typ.
––– 0.
24 ––– Max.
0.
50 ––– 40 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 1 08/18/10 IRFP260NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)