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2N5070

Part Number	2N5070
Manufacturer	Advanced Semiconductor
Description	NPN Silicon RF Power Transistor
Published	May 11, 2006
Detailed Description	( DataSheet : www.DataSheet4U.com ) 2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5070 is Designed fo...
Datasheet	2N5070 PDF File

Overview

( DataSheet : www.
DataSheet4U.
com ) 2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5070 is Designed for High Power Linear Amplifier Application in the 2.
0 to 75 MHz Range.
FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS 3.
3 A IC 10 A (PEAK) VCE PDISS TSTG θJC 30 V 70 W @ TC = 25 OC -65 OC to +200 OC 2.
5 OC/W PACKAGE STYLE TO- 60 1 = EMITTER 2 = BASE 3 = COLLECTOR CASE = EMITTER CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 200 mA BVCER IC = 200 mA RBE = 5.
0 Ω ICEO VCE = 30 V ICEV VCE = 60 V VBE = -1.
5 V VCE = 60 V VBE = -1.
5 V TC = 150 OC ICBO VCB = 60 V IEBO VEB = 4.
0 V hFE VCE = 5.
0 V IC = 1.
0 A IC = 3...

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