RF Power Field Effect Transistors - Motorola
Description
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Freescale Semiconductor Technical Data
MRF1535T1 Rev.
7, 3/2005
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 520 MHz.
The high gain and broadband performance of these devices make them ideal for large−signal, common source amplifier applications in 12.
5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.
5 Volts Output Power — 35 Watts Power Gain — 10.
0 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.
6 Vdc, 520 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedance Parameters • Broadband−Full Power Across the Band: 135−175 MHz 400−470 MHz 450−520 MHz • Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request • N Suffix Indicates Lead−Free Terminations • 200_C Capable Plastic Package • In Tape and Reel.
T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
520 MHz, 35 W, 12.
5 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFETs
CASE 1264−09, STYLE 1 TO−272 PLASTIC MRF1535T1(NT1)
CASE 1264A−02, STYLE 1 TO−272 STRAIGHT LEAD PLASTIC MRF1535FT1(FNT1)
Table 1.
Maximum Ratings
Rating Drain−Source Voltage Gate−Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature
(1)
Symbol VDSS VGS ID PD Tstg TJ
Value −0.
5, +40 ± 20 6 135 0.
50 − 65 to +150 200
Unit Vdc Vdc Adc W W/°C °C °C
Table 2.
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.
90 Unit °C/W
Table 3.
Moisture Sensitivity Level
Test Methodology Per JESD 22−A113, IPC/JEDEC J−STD−020 TJ – TC 1.
Calculated based on the formula PD = RθJC NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observe...
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