(GE28FxxxKx) Intel StrataFlash Memory (J3) - Intel Corporation
Description
Intel StrataFlash® Synchronous Memory (K3/K18)
28F640K3, 28F640K18, 28F128K3, 28F128K18, 28F256K3, 28F256K18 (x16)
Datasheet
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Product Features
Performance — 110/115/120 ns Initial Access Speed for 64/128/256 Mbit Densities — 25 ns Asynchronous Page-Mode Reads, 8 Words Wide — 13 ns Synchronous Burst-Mode Reads, 8 or 16 Words Wide — 32-Word Write Buffer — Buffered Enhanced Factory Programming Software — 25 µs (typ.
) Program and Erase Suspend Latency Time — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible — Programmable WAIT Signal Polarity Quality and Reliability — Operating Temperature: –40 °C to +85 °C — 100K Minimum Erase Cycles per Block — 0.
18 µm ETOX™ VII Process
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Architecture — Multi-Level Cell Technology: High Density at Low Cost — Symmetrical 64 K-Word Blocks — 256 Mbit (256 Blocks) — 128 Mbit (128 Blocks) — 64 Mbit (64 Blocks) — Ideal for “CODE + DATA” applications Security — 2-Kbit Protection Register — Unique 64-bit Device Identifier — Absolute Data Protection with VPEN and WP# — Individual and Instantaneous Block Locking, Unlocking and Lock-Down Capability Packaging and Voltage — 64-Ball Intel® Easy BGA Package (128-Mbit is also offered in a lead-free package) — 56-and 79-Ball Intel® VF BGA Package — VCC = 2.
70 V to 3.
60 V — VCCQ = 1.
65 to 1.
95 V/2.
375 to 3.
60 V
The Intel StrataFlash® Synchronous Memory (K3/K18) product line adds a high performance burst-mode interface and other additional features to the Intel StrataFlash® memory family of products.
Just like its J3 counterpart, the K3/K18 device utilizes reliable and proven two-bit-percell technology to deliver 2x the memory in 1x the space, offering high density flash at low cost.
This is Intel’s third generation MLC technology, manufactured on 0.
18 µm lithography, making it the most widely used and proven MLC product family on the market.
K3/K18 is a 3-volt device (core), but it is available with 3-volt (K3) or 1.
8-volt (K18) I...
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