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H5N5006LS

Hitachi
Part Number H5N5006LS
Manufacturer Hitachi
Description (H5N5006xx) Silicon N-Channel MOSFET
Published Mar 13, 2006
Detailed Description H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1549 (Z) Features • Low o...
Datasheet PDF File H5N5006LS PDF File

H5N5006LS
H5N5006LS

Overview
H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1549 (Z) Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Avalanche ratings Outline LDPAK G w w w a .
D D S S ta 1 2 3 e h 1 2 U 4 t e 4 4 .
c m o Rev.
0 Aug.
2002 4 3 1 2 H5N5006LS 3 H5N5006LD H5N5006LM 1.
Gate 2.
Drain 3.
Source 4.
Drain w w w .
D at h S a t e e 4U .
m o c H5N5006LD, H5N5006LS, H5N5006LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 Note 1 Value 500 ±30 3.
5 14 3.
5 3.
5 50 2.
5 150 –55 to +150 Unit V V A A A A W °C/W °C °C Pch Note 2 θch-c Tch Tstg Rev.
0, Aug.
2002, page 2 of 12 H5N5006LD, H5N5006LS, H5N5006LM Electrical Characteristics (Ta = 25°C) Item Symbol Min 500 — — 3.
0 1.
8 — — — — — — — — — — — — — — Typ — — — — 3.
0 2.
5 365 35 8 20 13 48 14 14 2 8 0.
85 280 0.
8 Max — 1 ±0.
1 4.
5 — 3.
0 — — — — — — — — — — 1.
3 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC Test Conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.
75 A, VDS = 10 V Note ID = 1.
75 A, VGS = 10 V Note VDS = 25 V VGS = 0 f = 1 MHz VDD ≅ 250 V, ID = 1.
75 A VGS = 10 V RL = 143 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 3.
5 A IF = 3.
5 A, VGS = 0 IF = 3.
5 A, VGS = 0 diF/dt = 100 A/µs 4 4 Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gat...


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