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MSA-0486

Hewlett-Packard
Part Number MSA-0486
Manufacturer Hewlett-Packard
Published Mar 3, 2006
Description Cascadable Silicon Bipolar MMIC Amplifier
Detailed Description Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0486
Datasheet PDF File MSA-0486 PDF File

MSA-0486
MSA-0486


Overview
Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0486 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 3.
2 GHz • 8 dB Typical Gain at 1.
0 GHz • 12.
5 dBm Typical P1 dB at 1.
0 GHz • Unconditionally Stable (k>1) • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1.
Refer to PACKAGING section “Tapeand-Reel Packaging for Surface Mount Semiconductors”.
Description The MSA-0486 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package.
This MMIC is designed for use as a general purpose 50 Ω gain block.
Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
86 Plastic Package Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.
25 V 2 2 MSA-0486 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 85 mA 500 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 100°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 10 mW/°C for TC > 100°C.
4.
See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C Symbol GP ∆GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω Power Gain (|S21 Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Devi...


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