ST W15NB50 ST H15NB50FI
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STW15NB50 STH15NB50FI
N-CHANNEL 500V - 0. 33Ω - 14. 6A T0-247/ISOWATT218 PowerMESH™ MOSFET
V DSS 500 V 500 V R DS(on) < 0. 36 Ω < 0. 36 Ω ID 14. 6 A 10. 5 A
TYPE
TYPICAL RDS(on) = 0. 33 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives th...