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MTP40N10E

Motorola
Part Number MTP40N10E
Manufacturer Motorola
Description TMOS POWER FET
Published Jan 27, 2006
Detailed Description MOTOROLA w m o Advance Data Sheet.c U TMOS E-FET t4 . ™ eEffect Transistor Power Field e N–Channel h Enhancement–Mode ...
Datasheet PDF File MTP40N10E PDF File

MTP40N10E
MTP40N10E

Overview
MOTOROLA w m o Advance Data Sheet.
c U TMOS E-FET t4 .
™ eEffect Transistor Power Field e N–Channel h Enhancement–Mode Silicon Gate S a t a D .
w w This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Sour...


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