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MTP4N50E

Motorola
Part Number MTP4N50E
Manufacturer Motorola
Description TMOS POWER FET
Published Jan 27, 2006
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ High Energy Power FET N–Channel Enhancement–Mode Silic...
Datasheet PDF File MTP4N50E PDF File

MTP4N50E
MTP4N50E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .
™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified...


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