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2SK0656

Panasonic Semiconductor
Part Number 2SK0656
Manufacturer Panasonic Semiconductor
Description Silicon N-Channel MOSFET
Published Jan 6, 2006
Detailed Description Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 ...
Datasheet PDF File 2SK0656 PDF File

2SK0656
2SK0656

Overview
Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching 4.
0±0.
2 2.
0±0.
2 (0.
8) 3.
0±0.
2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 0.
45+0.
20 –0.
10 (2.
5) (2.
5) 0.
45+0.
20 –0.
10 0.
7±0.
1 1 15.
6±0.
5 G High-speed switching G Small drive current owing to high input inpedance G High electrostatic breakdown voltage 2 3 (0.
8) 0.
75 max.
7.
6 1: Source 2: Drain 3: Gate NS-B1 Package Internal Connection D R1 G R2 S I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VOH VOL R1 + R2*1 Coss ton*2 toff *2 Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200Ω VDD = 5V, VGS = 5V, RL = 200Ω min typ max 10 Unit µA µA V V Ω mS V 40 50 1.
5 80 3.
5 50 20 4.
5 35 1 100 9 200 V kΩ pF pF pF µs µs Input capacitance (Common Source) Ciss Output capacitance (Common Source) VDS = 10V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time *1 *2 4.
5 1.
1 1 1 Resistance ratio R1/R2 = 1/50 Pulse measurement Note) The part number in the parenthesis shows conventional part number.
285 Silicon MOS FETs (Small Signal) PD  Ta 240 120 Ta=25˚C 200 100 100 2SK0656 ID  VDS 120 VDS=5V ID  VGS Allowable power dissipation PD (mW) Drain current ID (mA) 160 80 Dr...


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