HEXFET Power MOSFET - International Rectifier
Description
PD - 94403A
SMPS MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.
5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC
IRL3716 IRL3716S IRL3716L
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
4.
0mΩ
ID
180A
TO-220AB IRL3716
D2Pak IRL3716S
TO-262 IRL3716L
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 180 130 720 210 100 1.
4 -55 to + 175
Units
V V A W W W/°C °C
= 25°C = 100°C = 25°C = 100°C
TJ , TSTG
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– 0.
50 ––– –––
Max.
0.
72 ––– 62 40
Units
°C/W
Notes through are on page 11
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irf.
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1
10/8/04
IRL3716/3716S/3716L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min.
20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.
0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ.
Max.
Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.
021 ––– V/°C Reference to 25°C, ID = 1mA 3.
0 4.
0 VGS = 10V, ID = 90A mΩ 4.
0 4.
8 VGS = 4.
5V, ID = 72A ––– 3.
0 V VDS = VGS, ID = 250µA ––– 20 VDS = 16V, VGS = 0V µA ––– 250 VDS = 16V, VGS = 0V, TJ = 125°C ––– 200 VGS = 16V nA ––– -200 VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss Rg td(on)...
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