®
SD2900
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
s s s s s s s s
GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - 500 MHz 5 WATTS 28 VOLTS 13. 5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY M113 epoxy sealed ORDER CODE BRANDING SD2900 SD2900
DESCRIPTION The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz
PIN CONNECTION
1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M Ω) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 65 65 ± 20 900 21. 9 200 -65 to 150
3. Gate 4. Source
Uni t V V V mA W
o o
C C
THERMAL DATA
R th (j-c) R th(c -s) Junction-Case T hermal Resistance Case-Heatsink T hermal Resistance ∗ 8. 0 0. 30
o o
C/W C/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
1/8
SD2900
ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC
Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 5 mA V DS = 28 V V DS = 0 V I D = 10 mA ID = 0. 5 A I D = 0. 5 A V DS = 28 V V DS = 28 V V DS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 0. 2 8. 5 7. 8 1. 4 1. 0 Min. 65 0. 5 1. 0 6. 0 1. 6 Typ . Max. Un it V mA µA V V mho pF pF pF
REF. 1021307I
DYNAMIC
Symb ol P OUT G PS ηD f = 400 MHz f = 400 MHz f = 400 MHz Parameter V DD = 28 V V DD = 28 V V DD = 28 V V DD = 28 V P out = 5 W P out = 5 W P out = 5 W IDQ = 50 mA I DQ = 50 mA I DQ = 50 mA I DQ = 50 mA Min. 5 13. 5 45 30:1 16 50 Typ . Max. Un it W dB % VSW R
Load f = 400 MHz Mismatch All Angles
IMPEDANCE DATA
FREQ . 400 MHz
Z IN ( Ω ) 8. 6 - j 24. 6
Z DL ( Ω) 22. 6 + j 27. 0
2/8
SD2900
TYPICAL PERFORMANCE Capacitance ...
SD2900 PDF File
