2SK3053 - NEC
Description
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3053
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments.
ORDERING INFORMATION
PART NUMBER 2SK3053 PACKAGE Isolated TO-220
FEATURES
• Low On-State Resistance RDS(on)1 = 45 mΩ MAX.
(VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX.
(VGS = 4.
0 V, ID = 13 A) • Low Ciss : Ciss = 790 pF TYP.
• Built-in Gate Protection Diode • Isolated TO-220 package (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
Note2 Note2
60 ±20 +20, −10 ±25 ±75 30 2.
0 150 –55 to +150 12.
5 15.
6
V V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
IAS EAS
Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1 % ! 2.
Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D12912EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan
The mark ! shows major revised points.
©
1999, 2000
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2SK3053
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD...
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