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AGB3300

ANADIGICS
Part Number AGB3300
Manufacturer ANADIGICS
Description 50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK
Published Oct 8, 2005
Detailed Description AGB3300 50W High Linearity Low Noise Wideband Gain Block FEATURES · · · · · · · · · 250-3000 MHz Frequency Range +43 dBm...
Datasheet PDF File AGB3300 PDF File

AGB3300
AGB3300


Overview
AGB3300 50W High Linearity Low Noise Wideband Gain Block FEATURES · · · · · · · · · 250-3000 MHz Frequency Range +43 dBm Output IP3 Low Noise Figure: 2 dB at 900 MHz 14.
5 dB Gain at 900 MHz (matched) +22 dBm P1dB SOT-89 Package Single +5V Supply Low Power: 700 mW Case Temperature: -40 to +85 oC Data Sheet - Rev 2.
1 APPLICATIONS · · · · · Cellular Base Stations for CDMA, TDMA, GSM, PCS and CDPD systems Fixed Wireless MMDS/WLL WLAN, HyperLAN CATV S24 Package SOT-89 PRODUCT DESCRIPTION The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low distortion.
With a high output IP3, low noise figure and wide band operation, the AGB3300 is ideal for 50 W wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL.
Offered in a low cost SOT-89 surface mount package, the AGB3300 requires a single +5V supply, and typically consumes 700 mW of power.
RF Input RF Output / Bias Figure 1: Block Diagram 06/2003 AGB3300 GND 4 1 RFIN 2 GND Figure 2: Pin Out 3 RFOUT Table 1: Pin Description PIN 1 2 3 4 N AME RFIN GND RFOUT GND D ESC R IPTION RF Input Ground RF Output / Bi as Ground 2 Data Sheet - Rev 2.
1 06/2003 AGB3300 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PAR AMETER D evi ce Voltage RF Input Power Storage Temperature C hannel Temperature MIN 0 -40 - MAX +8 +15 +150 +150 U N IT VD C dB m °C °C Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges PAR AMETER Operati ng Frequency: f D evi ce Voltage: VDD C ase Temperature: Tc MIN 250 -40 TYP +5 - MAX 3000 +6 +85 U N IT MHz VD C o C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electr...


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