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MTY100N10E

Part Number	MTY100N10E
Manufacturer	Motorola
Description	TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM
Published	Sep 29, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effec...
Datasheet	MTY100N10E PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™ Data Sheet TMOS E-FET.
™ Power Field Effect Transistor Designer's MTY100N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source diode with fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads.
The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional...

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MTY100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM - Motorola

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