Silicon N-Channel MOSFET - Toshiba Semiconductor
Description
SSM3K16FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FU
High Speed Switching Applications Analog Switching Applications
• Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.
0 Ω (max) (@VGS = 4 V)
: Ron = 4.
0 Ω (max) (@VGS = 2.
5 V) : Ron = 15 Ω (max) (@VGS = 1.
5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS
20
V
VGSS
±10
V
ID
100
mA
IDP
200
PD(Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.
4 mm × 25.
4 mm × 1.
6 t, Cu Pad: 0.
6 mm2 × 3)
Unit: mm
JEDEC JEITA TOSHIBA
― SC-70 2-2E1E
0.
6 mm 1.
0 mm
Marking
3
Equivalent Circuit
3
DS
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity.
Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production
2001-03
1
2014-03-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage ...
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