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SPW24N60C3

Infineon Technologies
Part Number SPW24N60C3
Manufacturer Infineon Technologies
Description Cool MOS Power Transistor
Published Sep 21, 2005
Detailed Description SPW24N60C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Pe...
Datasheet PDF File SPW24N60C3 PDF File

SPW24N60C3
SPW24N60C3


Overview
SPW24N60C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID 650 0.
16 24.
3 V Ω A P-TO247 Type SPW24N60C3 Package P-TO247 Ordering Code Q67040-S4640 Marking 24N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1) Drain source voltage slope Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V GS Power dissipation Operating and storage temperature Rev.
1.
0 P tot T j, T stg page 1 I D=24.
3 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) T C=25 °C T C=25 °C I D=12.
1 A, V DD=50 V I D=24.
3 A, V DD=50 V Value 24.
3 15.
4 72.
9 780 1.
5 24.
3 50 ±20 ±30 240 -55 .
.
.
150 W °C 2004-04-27 A V/ns V mJ Unit A SPW24N60C3 Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature R thJC R thJA leaded 1.
6 mm (0.
063 in.
) from case for 10 s 0.
52 62 K/W Values typ.
max.
Unit T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) V GS=0 V, I D=24.
3 A V DS=V GS, I D=1.
2 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=15.
4 A, T j=25 °C V GS=10 V, I D=15.
4 A, T j=150 °C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=15.
4 A 600 2.
1 700 3 3.
9 V Zero gate voltage drain current I DSS - 0.
1 1 µA - 0.
14 1...


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