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SPW11N60C3

Infineon Technologies
Part Number SPW11N60C3
Manufacturer Infineon Technologies
Description Cool MOS Power Transistor
Published Sep 21, 2005
Detailed Description Final data SPW11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionar...
Datasheet PDF File SPW11N60C3 PDF File

SPW11N60C3
SPW11N60C3

Overview
Final data SPW11N60C3 VDS @ Tjmax RDS(on) ID 650 0.
38 11 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance V Ω A Type SPW11N60C3 Package P-TO247 Ordering Code Q67040-S4418 Marking 11N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.
5 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt IS=11A, VDS=480V, T j=125°C Symbol ID Value 11 7 Unit A I D puls EAS 33 340 0.
6 11 6 ±20 ±30 125 -55.
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+150 W °C 2003-09-17 A V/ns V mJ Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Page 1 VGS VGS Ptot T j , T stg Fina...


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