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SPW11N60CFD

Infineon Technologies
Part Number SPW11N60CFD
Manufacturer Infineon Technologies
Description Cool MOS Power Transistor
Published Sep 21, 2005
Detailed Description SPW11N60CFD Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Per...
Datasheet PDF File SPW11N60CFD PDF File

SPW11N60CFD
SPW11N60CFD

Overview
SPW11N60CFD Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.
44 11 P-TO247 V Ω A Type SPW11N60CFD Package P-TO247 Ordering Code Q67040-S4619 Marking 11N60CFD Maximum Ratings Parameter Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 5.
5 A, V DD = 50 V Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 11 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode d v/dt IS=11A, V DS=480V, T j=125°C Symbol ID Value 11 7 28 340 0.
6 11 40 ±20 ±30 125 -55.
.
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+150 Unit A ID puls EAS mJ IAR dv/dt VGS VGS Ptot Tj , Tstg A V/ns V W °C Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Operating and st...


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